CdZnTe材料的表面钝化新工艺  

A Novel Surface Passivation Process of CdZnTe Material

作　　者：王昆黍[1] 桑文斌[1] 闵嘉华[1] 腾建勇[1] 张奇[1] 夏军[1] 钱永彪[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《Journal of Semiconductors》2005年第7期1475-1479,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:10175040);上海市科委基金(批准号:03DZ11006)资助项目~~

摘　　要：研究了一种新的钝化CdZnTe(CZT)器件表面的工艺,即先采用KOH KCl溶液对CZT表面进行处理,再用NH4F/H2O2溶液对其进行表面氧化的二步法钝化工艺.并借助俄歇电子能谱(AES)、微电流测试仪等手段对其表面钝化层的质量进行了鉴别,同时与KOH KCl和NH4F/H2O2两种工艺进行了比较.AES能谱分析表明,采用二步法工艺钝化,既可获得化学计量比较好的CZT表面,又可在表面形成一层起保护作用的氧化层.I V特性曲线显示,两步法钝化后CZT器件的漏电流与KOH KCl和NH4F/H2O2钝化相比都有一定程度的下降.说明文中提出的新工艺在CZT器件制备方面具有良好的应用前景.A novel passivation process is presented,in which first the CZT sample is etched by KOH-KC1 agent and then passivated by N H4 F/H2 O2 agent. The AES results show that the novel passivation process forms an oxide layer on the CZT surface and leaves a nearly stoichiometric interface layer between the oxide layer and CZT substrate. I-V characteristics show that the surface leakage current of the CZT detectors passivated by the novel process is reduced obviously in comparison with those either by KOH-KC1 or N H4 F/H2O2 process. These results indicate that this passivation process has promising applications in the fabrication of CZT detectors.

关 键 词：CDZNTE晶体 表面钝化 漏电流 KOH-KCl溶液 NH4F/H2O2溶液 

分 类 号：TG179[金属学及工艺—金属表面处理]