PZT铁电薄膜材料的ECR等离子体刻蚀研究  

Study of the ECR plasma etching process of PZT ferroelectric thin film materials

作　　者：娄利飞[1] 肖斌[1] 汪家友[1] 杨银堂[1] 李跃进[1] 

机构地区：[1]西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,陕西西安710071

出　　处：《西安电子科技大学学报》2005年第4期555-558,598,共5页Journal of Xidian University

基　　金：国家自然科学基金资助项目(90207022);国家部委预研基金资助项目(51411040105DZ0141)

摘　　要：以SF6和SF6+Ar为刻蚀气体,采用电子回旋共振等离子体刻蚀工艺成功地对溶胶-凝胶工艺制备的锆钛酸铅铁电薄膜进行了有效的刻蚀去除.研究了不同气体总流量、混合比、微波功率等因素对刻蚀速率的影响,指出当气体混合比约为20%时,刻蚀速率达到最大值.锆钛酸铅铁电薄膜表面组份XPS能谱分析曲线表明,在SF6和SF6+Ar气体中,被刻蚀后样品的Pb含量大大减少,TiO2的刻蚀是限制锆钛酸铅铁电薄膜刻蚀速率的主要因素.Electron cyclotron resonance （ECR） etching of the lead zirconate titanate （PZT） ferroelectric thin films produced via sol-gel process has been performed in SF6 and the SF6 ＋ Ar mixtures. The dependence of the etching rate on the total flow rate, gas mixing ratio and microwave power density has been systematically investigated. Experimental results show that the maxima of the etching rate is reached when the gas mixing ratio is about 20%. The surface component X-ray photoelectron spectroscopy （XPS） of PZT thin films indicate that the ECR etching process in SF6 and the SF6 ＋ Ar mxtures yield a great decrease in Pb content in the composition of PZT thin films, and that the etching of TiO2 is the major factor in restricting the PZT thin films etching rate.

关 键 词：电子回旋共振 等离子体刻蚀 锆钛酸铅 凝胶-溶胶工艺 

分 类 号：TN405.982[电子电信—微电子学与固体电子学]