纳米器件的发展动态  

Recent Development in Nanodevice

作　　者：翁寿松[1] 

机构地区：[1]无锡市罗特电子有限公司,江苏无锡214001

出　　处：《微纳电子技术》2005年第8期345-349,共5页Micronanoelectronic Technology

摘　　要：介绍了纳米CMOS器件、纳米电子器件和量子器件的发展动态,提出以信息载体来分类纳米器件的方式。在纳米CMOS器件方面,主要介绍近半年来65nm工艺及器件的最新动态;在纳米电子器件方面,主要介绍共振隧穿器件(RTD)的动态;在量子器件方面,主要介绍量子器件和半导体自旋器件的概况。Recent development in nano-CMOS device, nanoelectronic device and quantum device were introduced. The classification of nanodevice by information carrier is proposed. In nano-CMOS device, the development in 65 nm technology and device in recent half years are introduced. In nanoelectronic device, the resonant tunneling device is introduced. In quantum device, general situation semiconductor self-spining device are introduced.

关 键 词：纳米器件 纳米CMOS器件 纳米电子器件 量子器件 

分 类 号：TN40[电子电信—微电子学与固体电子学]