BaSnO_3纳米粉改性Ba(Mg_(1/3)Ta_(2/3))O_3介质陶瓷的研究  

Study on Ba(Mg_(1/3)Ta_(2/3))O_3 Ceramics Doped with BaSnO_3 Nanoscaled Powder

作　　者：王伟[1] 吴顺华[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《压电与声光》2005年第4期412-414,共3页Piezoelectrics & Acoustooptics

基　　金："八六三"基金资助项目(2001AA325110)

摘　　要：以BaSnO3纳米粉体作为添加剂制备(1-x)B a(M g1/3T a2/3)O3-xB aSnO3陶瓷,并与以SnO2为起始原料直接合成的BM T-BS陶瓷作了对比研究。当x(Sn)=12%时,两种工艺在1 500°C保温4 h均能使材料烧结致密。不同的工艺对材料介电常数(rε)和谐振频率温度系数(fτ)的影响没有明显差异,但掺杂B aSnO3纳米粉体的试样具有明显较高的品质因数(Q),该材料的微波介电性能为:rε=24.6,fτ≈0.8×1-0 6/°C,Q×f≈2.24×105GH z。（1-x）Ba （Mg1/3Ta2/3）O3-xBaSnO3 dielectric ceramics were prepared using BaSnO3 nanoscaled powder and SnO2 as startling materials, respectively. When Sn content is 12%, both routes can enable dense BMT-BS ceramics to be sintered at 1 500 ℃ for 4 h and no obvious differences were found in relative dielectric constant and temperature coefficient of resonant frequency of materials prepared through different routes. However, BMT-BS ceramics doped with BaSnO3 nanoscaled powder exhibit evidently higher quality factors, whose microwave dielectric properties are：εt=24.6, τf≈0.8× 10^-6/℃, Q×f≈2.24×105 GHz.

关 键 词：Ba(Mg1/3Ta2/3)O3 纳米粉体 BaSnO3 烧结性能 微波介电性能 

分 类 号：TQ174[化学工程—陶瓷工业] O641.51[化学工程—硅酸盐工业]