微观结构对PZT薄膜反应离子刻蚀的影响  

Research on the Reactive Ion Etching of PZT Thin Film: the Effects of the Microstructure on the Etching Properties

作　　者：史鹏[1] 张良莹[1] 姚熹[1] 

机构地区：[1]同济大学功能材料研究所,上海200092

出　　处：《压电与声光》2005年第4期415-417,共3页Piezoelectrics & Acoustooptics

基　　金：上海市重点学科建设基金资助项目

摘　　要：随着锆钛酸铅(PZT)薄膜在铁电微器件中的广泛应用,薄膜微图形化和刻蚀的研究也日益受到重视。研究表明在薄膜的刻蚀过程中,薄膜表面的微观结构和等离子体都对刻蚀有很大的影响。该文研究了具有不同微观结构的薄膜的反应离子刻蚀特性。分别用X-射线衍射图、原子力间力显微镜和X-射线光电子能谱对薄膜表面的微观结构、形貌及刻蚀特性进行测量。结果表明,随着薄膜最终热处理温度升高,薄膜表面越来越致密,刻蚀速率也随之降低。当薄膜处于无定形态结构时薄膜的刻蚀速率较高,最高可达13 m/m in。Micro patterning and etching characteristics of lead zirconate titanate（PZT） thin film are very interesting for the fabrication of various ferroelectric micro devices. Besides the effects of plasma, the microstructure of PZT films is very important in etching process. The characteristics of reactive ion etching of PZT films with different microstructure were investigated. The morphology and microstructure were examined by atomic force microscopy （AFM） and X-ray Diffraction （XRD）. The properties of etching were measured by AFM and X-ray photoelectron spectroscopy （XPS）. With the annealing temperature increases, the microstructure becomes more compact and the etching rate decreases. The highest etching rate is about 13 nm/m_in when the microstructure of PZT film is amorphous and without crystallization.

关 键 词：锫钛酸铅 薄膜 反应离子刻蚀 微观结构 

分 类 号：TN405[电子电信—微电子学与固体电子学]