基于中频溅射的掺铒Al_2O_3薄膜的光致发光特性  

Photoluminescence characteristics of Er_-^(3+) doped Al_2O_3 film based on medium frequency sputtering

作　　者：宋琦[1] 宋昌烈[1] 李成仁[1] 李淑凤[1] 李建勇[1] 李国卿[1] 

机构地区：[1]大连理工大学物理系,辽宁大连116024

出　　处：《光学技术》2005年第4期519-521,524,共4页Optical Technique

基　　金：国家自然科学基金资助项目(69889701);辽宁省科技厅资助项目(20022110);辽宁省教育厅资助项目(202123198)

摘　　要：利用中频磁控溅射方法沉积制备了掺铒Al2O3薄膜,室温下测量了薄膜在1535nm波长处的光致发光光谱和抽运功率、掺铒浓度、退火温度对光致发光光谱强度的影响。结果表明,在真空气压为2×10-1Pa,氩气流量为70cm3/s,氧气流量为25～45cm3/s的条件下,最佳掺铒浓度为1.0at%,最佳退火温度为850℃。Er-^3＋ doped Al2O3 films were fabricated by medium frequency magnetron sputtering, strong photoluminescence at 1535 nm was detected at the room temperature. The influence of pump power, Er3 ＋ concentration, annealing temperature and different substrate on photoluminescence intensity was discussed. The results show optimized Er3＋ concentration is 1.0 at%, the annealing temperature is 850℃ under 2 × 10^-1 Pa, Ar flow 70cm^3/s and O flow 25cm^3/s.

关 键 词：掺铒Al2O3薄膜 中频磁控溅射 光致发光特性 退火温度 

分 类 号：O613[理学—无机化学]