高性能移动电话音频功率放大芯片分析与设计  

Design of a High Performance Audio Power Amplifier for Mobile Phones

作　　者：李建龙[1] 冯全源[1] 

机构地区：[1]西南交通大学微电子研究所,四川成都610031

出　　处：《微电子学》2005年第4期379-381,385,共4页Microelectronics

基　　金：国家自然科学基金资助项目(60371017)

摘　　要：文章成功地将一种全差分折叠式共源共栅运算放大器结构应用于移动电话音频功率放大芯片的设计中。仿真表明,该音频功率放大芯片的电源抑制比(PSRR)在20Hz～20kHz频段始终高于60dB;尤其是在217Hz的频率上,其PSRR值达到了82dB。该设计提高了音频芯片的抗电源噪声能力,改善了通话语音质量。芯片采用华润上华(CSMC)0.6μm、3.3V/5V电源电压、2层多晶2层金属CMOS工艺制造。A fully-differential folded cascode op-amp is successfully integrated into audio power amplifier for mobile phones. Simulation shows that the power supply rejection ratio （PSRR） of the power amplifier chip is improved, which is constantly above 60 dB between 20 Hz and 20 kHz,and even reaches 82 dB at 217 Hz, and its ability of noise resistance is enhanced as well. The chip is manufactured in CSMC＇s 0. 6 μm, 3.3 V / 5 V 2-polysilicon-2-metal-layer CMOS process.

关 键 词：全差分析叠 共源共栅 运算放大器 电源抑制比 音频功率放大 

分 类 号：TN722.75[电子电信—电路与系统]