YbF_3沉积速率对红外激光薄膜表面缺陷的影响  

Influence of YbF_3 deposition rate on surface defect density of infrared laser thin film

作　　者：张耀平[1] 许鸿[1] 凌宁[1] 张云洞[1] 

机构地区：[1]中国科学院光电技术研究所

出　　处：《强激光与粒子束》2005年第7期1019-1022,共4页High Power Laser and Particle Beams

基　　金：国家863计划项目资助课题

摘　　要：在介绍了薄膜缺陷的特点及成因的基础上,分析了YbF3沉积速率对红外激光薄膜表面缺陷密度的影响,得出了镀制激光薄膜所需的合适速率。结果表明:薄膜表面缺陷主要以节瘤缺陷与陷穴缺陷为主,其缺陷密度随YbF3沉积速率的减小基本表现为减小的趋势,当ZnS沉积速率约为0.2nm/s,YbF3沉积速率约为0.4nm/s时,可得到比较满意的激光薄膜,薄膜表面缺陷密度仅为0.000675。The properties and derivation of defects in thin film are introduced in this paper. The influence of the deposition rate of YbF3 on the surface defect density of infrared laser thin film is analyzed. The appropriate deposition rate of YbF3 on the thin film is put forward. The result shows that the nodules and concave holes are the main defects in the infrared laser thin film, and that the defect density decreases with the decrease of deposition rate of YbF3. The defect density is only 0. 000 675 when deposition rates are 0.4 nm/s for ZnS and 0.2 nm/s for YbF3, respectively.

关 键 词：激光薄膜 沉积速率 缺陷密度 损伤阈值 

分 类 号：O484.1[理学—固体物理]