GaAlAs/GaAs量子阱材料的光荧光谱研究  

Study on Photoluminescence of GaAlAs/GaAs Quantum Well Materials

作　　者：刘文莉[1] 李林[1] 钟景昌[1] 王晓华[1] 刘国军[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《光电子技术与信息》2005年第4期23-25,共3页Optoelectronic Technology & Information

基　　金：高功率半导体激光国家重点实验室基金(ZS3603)

摘　　要：分子束外延生长GaAlAs/GaAs量子阱材料时,适当的衬底温度和Ⅴ/Ⅲ束流比是改善AlGaAs材料生长质量的重要因素。对GaAs、GaAlAs材料的生长条件进行优化,获得了高质量的量子阱材料,有源层分别为8nm、10nm、12nm时,10K下的PL谱半峰宽(FWHM)分别为6.42meV、6.28meV、6.28meV。The GaAlAs/GaAs material with gradient refraction index quantum well structure has been grown by MBE. On the base of AlGaAs, GaAs fundamental material growth, excellent materials by the substrate temperature and Ⅴ/Ⅲ flux ratio optimization were achieved. Spectral characteristics of the sample were studied with photoluminescence (PL) measurement. For 8 nm, 10 nm and 12 nm multiple quantum wells, the photoluminescence spectra at 10 K are characterized, the FWHM are 6.42 meV .6.28 meV and 6.28 meV, respectively.

关 键 词：量子阱 光荧光(PL)谱 Ⅴ/Ⅲ束流比 

分 类 号：TN304[电子电信—物理电子学]