Effect of oxygen flow rate on the properties of SiO_x films deposited by reactive magnetron sputtering  

作　　者：赖发春 李明 王海千 姜友松 宋亦周 

机构地区：[1]Hefei National Laboratory for Physical Sciences at Microscale, and USTC-Shincron Joint Lab, University of Science and Technology of China [2]School of Physics and Opto-Electronics Technology, Fujian Normal University, Fuzhou 350007 [3]Shincron Co., LTD., Shinagawa-Ku, Toyo 140-0011, Japan

出　　处：《Chinese Optics Letters》2005年第8期490-493,共4页中国光学快报（英文版）

基　　金：This work was supported by the National Natural Sci-ence Foundation of China under Grant No. 50121202and 10174073

摘　　要：SiOx （x = 0-2） films were deposited on BK-7 substrates by a low frequency reactive magnetron sputtering system with the oxygen flow rate （OFR） changing from 0 to 30 sccm. The samples were characterized by atomic force microscopy, spectrophotometer, and X-ray photoelectron spectroscopy. The extinction coefficient and refractive index decrease, while the optical transmittance increases with the increase of OFR from 0 to 17 sccm. The root mean square surface roughness has a maximum at 10 sccm OFR. The highest deposition rate is at 15 sccm OFR. Our results show that the films deposited at 20 sccm OFR are stoichiometric silica with relatively high deposition rate, low extinction coefficient, and low surface roughness. Therefore, a precise control of OFR is very important to obtain high quality films for optical applications.SiOx （x = 0-2） films were deposited on BK-7 substrates by a low frequency reactive magnetron sputtering system with the oxygen flow rate （OFR） changing from 0 to 30 sccm. The samples were characterized by atomic force microscopy, spectrophotometer, and X-ray photoelectron spectroscopy. The extinction coefficient and refractive index decrease, while the optical transmittance increases with the increase of OFR from 0 to 17 sccm. The root mean square surface roughness has a maximum at 10 sccm OFR. The highest deposition rate is at 15 sccm OFR. Our results show that the films deposited at 20 sccm OFR are stoichiometric silica with relatively high deposition rate, low extinction coefficient, and low surface roughness. Therefore, a precise control of OFR is very important to obtain high quality films for optical applications.

关 键 词：Atomic force microscopy Light extinction Magnetron sputtering OPACITY Oxygen Refractive index SILICA Silicon compounds SPECTROPHOTOMETERS Surface roughness X ray photoelectron spectroscopy 

分 类 号：O471[理学—半导体物理] O484[理学—物理]