Deposition of ZnO thin films on (100) γ-LiAlO_2 substrate  

作　　者：邹军 周圣明 张霞 苏风莲 李效民 徐军 

机构地区：[1]Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences [2]Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050 4 Anhui University [3]Anhui University

出　　处：《Chinese Optics Letters》2005年第8期494-496,共3页中国光学快报（英文版）

摘　　要：Optical properties for ZnO thin films grown on （100） γ-LiAlO2（LAO） substrate by pulsed laser deposition method were investigated. The c-axis oriented ZnO films were grown on （100） γ-LiAlO2 substrates at. the substrate temperature of 550℃. The transmittance of the films was over 85%. Peaks attributed to excitons were shown in absorption spectra, which indicated that thin films had high crystallinity, Photoluminescence spectra with the maximum pead at 540 nm were observed at room temperature, which seemed to be ascribed to oxygen vacancy in the ZnO films caused by diffusion of Li from the substrates into the films during the deposition.Optical properties for ZnO thin films grown on （100） γ-LiAlO2（LAO） substrate by pulsed laser deposition method were investigated. The c-axis oriented ZnO films were grown on （100） γ-LiAlO2 substrates at. the substrate temperature of 550℃. The transmittance of the films was over 85%. Peaks attributed to excitons were shown in absorption spectra, which indicated that thin films had high crystallinity, Photoluminescence spectra with the maximum pead at 540 nm were observed at room temperature, which seemed to be ascribed to oxygen vacancy in the ZnO films caused by diffusion of Li from the substrates into the films during the deposition.

关 键 词：OPACITY PHOTOLUMINESCENCE Pulsed laser deposition SUBSTRATES Thin films Zinc oxide 

分 类 号：O472.3[理学—半导体物理] O484.41[理学—物理]