Oxygen Precipitation within Denuded Zone Founded by Rapid Thermal Processing in Czochralski Silicon Wafers  

作　　者：崔灿 杨德仁 马向阳 符黎明 樊瑞新 阙端麟 

机构地区：[1]State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027

出　　处：《Chinese Physics Letters》2005年第9期2407-2410,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 90207024 and 60225010, the National High Technology Development Program of China under Grant No 2004AA3Z1142, and the Program for New Century Excellent Talents in Universities of China.

摘　　要：Oxygen precipitation within the magic denuded zone （MDZ） founded by rapid thermal processing in Czochralski silicon （CZ-Si） wafers is investigated. After the standard MDZ process, the CZ-Si wafers are further subjected to two specific oxygen precipitation annealing, respectively. It is found that the MDZs in CZ-Si wafers shrunk notably because oxygen precipitation occurs within the MDZs. However, a width of substantial DZ still remains within the wafer. Therefore, it is believed that the outer region of the MDZs, which corresponds to the oxygen denuded zone formed in the course of rapid thermal process and high temperature annealing, is a substantial defect-free zone which acts as the active area for semiconductor devices.Oxygen precipitation within the magic denuded zone （MDZ） founded by rapid thermal processing in Czochralski silicon （CZ-Si） wafers is investigated. After the standard MDZ process, the CZ-Si wafers are further subjected to two specific oxygen precipitation annealing, respectively. It is found that the MDZs in CZ-Si wafers shrunk notably because oxygen precipitation occurs within the MDZs. However, a width of substantial DZ still remains within the wafer. Therefore, it is believed that the outer region of the MDZs, which corresponds to the oxygen denuded zone formed in the course of rapid thermal process and high temperature annealing, is a substantial defect-free zone which acts as the active area for semiconductor devices.

关 键 词：ACTIVATION-ANALYSIS BIPOLAR STRUCTURE GROWN SILICON NITROGEN BEHAVIOR 

分 类 号：O47[理学—半导体物理]