对向靶溅射TiN薄膜的结构和物性  

STRUCTURE AND PROPERTIES OF TiN FILMS PREPARED BY FACING TARGETS SPUTTERING

作　　者：刘裕光[1] 姜恩永[1] 程启[1] 孙长庆[1] 

机构地区：[1]天津大学

出　　处：《金属学报》1995年第1期B031-B034,共4页Acta Metallurgica Sinica

摘　　要：利用对向靶溅射（ＦＴＳ）沉积出（１１１）择优取向的单相ＴｉＮ膜，膜硬度（ＨＶ）最高可达３８００，择优取向随基板偏压增高，可由（１１１）转向（２００），晶格常数随氮气分压增高而增大，这是氮原子进入四面体间隙引起的。The hardness (HV) of one of single-phase and (111) preferred orientation TiN films that were prepared by facing targets sputtering (FTS), is as high as 3800, the preferred orientation can change from ( 111 ) to (200) with the increase of substrate bias voltage, the lattice parameters vary with the pressure ratio of N_2 to Ar, the lattice expansion can be explained by the mechanism of interstitial N atom into the tetrahedral hole.

关 键 词：薄膜 溅射 织构系数 氮化钛 

分 类 号：O484.1[理学—固体物理]