纳米级SiC晶须的微波合成  

SYNTHESIS OF NANOMETER SILICON CARBIDE WHISKERS BY MICROWAVE HEATING

作　　者：戴长虹[1] 张劲松[1] 杨永进[1] 曹丽华[1] 张显鹏[1] 夏非[1] 

机构地区：[1]东北大学,中国科学院金属研究所,东北大学有色金属冶金系

出　　处：《金属学报》1995年第10期B473-B476,共4页Acta Metallurgica Sinica

基　　金：国家高技术新材料领域专家委员会资助

摘　　要：以酚醛树脂、超细炭黑和超细ＳｉＯ２为原料，用微波加热的方法合成了直径在纳米级的ＳｉＣ晶须。用Ｘ射线衍射、分析电镜等手段对ＳｉＣ晶须进行了结构测定。比较并分析了不同的炭源和温度对ＳｉＣ晶须性能的影响．A method for synthesizing silicon carbide whiskers by microwave heating is described in this paper. Silicon carbide whiskers with diameter in the range of nanometer have been obtaind by the reduction of SiO2 with C in an atmosphere of nitrogen. Ultrafine SiO2 powder, phenol formaldehyde resin and carbon black are used as starting materials. The structures of the whiskers are determined by means of XRD, TEM. The effects of temperature and carbon type on the production of SiC whiskers are discussed.

关 键 词：晶须 微波加热 碳化硅 纳米级 合成 

分 类 号：O784[理学—晶体学]