质量作用定律在半导体统计中的应用  

APPLICATION OF MASS REACTION LAW IN SEMICONDUCTOR STATISTICS

作　　者：马文采[1] 夏思淝[1] 李蕾[1] 裘南畹[1] 

机构地区：[1]山东工业大学数理系

出　　处：《山东工业大学学报》1995年第1期69-75,共7页

摘　　要：本文用化学反应动力学中的质量作用定律及阿累乌尼斯（Ａｒｒｂｅｎｉｕｓ）定律，对金属氧化物半导体一些统计公式进行了研究，给出了费米（Ｆｅｒｍｉ）函数、氧空位施主浓度的公式，表面吸附氧的氧原子及氧离子浓度公式．并对有关问题进行了讨论．Some researches about statistic formulas of metal oxide semiconductors were made with mass reaction law and Arrhenius law in chemical reaction kinetics. Fermi f unction,formula of donor density of oxygen vacancy and formulas of density of attracted oxygen atoms and ions on the surface were given,some concerned problems were also discussed.

关 键 词：反应动力学 质量作用定律 半导体统计 

分 类 号：O471.2[理学—半导体物理]