退火对Ar^+激光再结晶多晶硅/二氧化硅界面性质的影响  

Influence of Annealing on Ar^+ Laser Recrystallized Poly-Si/SiO_2 Interface Characteristics

作　　者：陈坚[1] 黄信凡[1] 鲍希茂[1] 

机构地区：[1]南京大学物理系

出　　处：《Journal of Semiconductors》1989年第3期217-221,共5页半导体学报（英文版）

摘　　要：本文对CW Ar^+激光再结晶SOI结构材料进行了氢等离子体退火和CW CO_2激光退少.结果表明,两种退火方法都可以明显地降低背界面的界面态陷阱密度.氢等离子体处理对晶粒间界引入的界面态退火效果更显著,而CO_2激光辐照对应力引入的界面态退火作用更明显.The hydrogen plasma annealing and CW CO_2 laser annealing on the CW Ar^+ laser re-crystallized SOI structure have been reported.The results show that two annealing methods areeffective for reducing the density of interface traps N it at the back interface.The hydrogenplasma treatment is more effective for the annealing of the interface state caused by grain bo-undaries,while CW CO_2 laser irradiation is much more favorable for the annealing of the in-terface state related to the stress.

关 键 词：薄膜 激光加工 半导体界面 结晶 

分 类 号：TN304.055[电子电信—物理电子学]