静电屏蔽晶体管GAT的结构研究  

A Study on the Structure of Gate Associated Transistors

作　　者：郑海东[1] 

机构地区：[1]浙江大学功率器件研究所

出　　处：《微电子学》1995年第3期23-26,共4页Microelectronics

摘　　要：本文介绍了静电屏蔽晶体管（ＧＡＴ）的结构与器件性能，该器件具有高耐压，高速和低饱和压降等优良特性。本文对该器件的结构作了较为详细的分析研究。A static shielding transistor(gate associated transistor,GAT)is presented in the pa- per.The device has the advantages of high breakdown voltage,fast switching speed and low satura- tion voltage drop as well as the improved reliability. A detailed investigation into the structure of the device is made in the paper.

关 键 词：功率器件 静电屏蔽晶体管 双极晶体管 结构 

分 类 号：TN322.803[电子电信—物理电子学]