自对准结构α－Si：HTFT特性的分析和研究  

A Study on the Charactereistics of α-Si:H TFT's With Sclf-Alignment Structures

作　　者：张少强[1] 徐重阳[1] 邹雪城[1] 周雪梅[1] 赵伯芳[1] 袁奇燕 符晖[1] 王长安[1] 

机构地区：[1]华中理工大学固体电子学系

出　　处：《微电子学》1995年第5期59-62,共4页Microelectronics

摘　　要：本文描述了用自对准工艺制各自对准结构的α－Ｓｉ：ＨＴＦＴ。从理论上分析了有源层α－Ｓｉ：Ｈ的厚度对α－Ｓｉ：ＨＴＦＴ特性的影响，据此提出一种新型的双有源层结构的α－ＳｉＴＦＴ。它可以有效地提高自对准α－Ｓｉ：ＨＴＦＴ的开态Ｉ＿（ＯＮ），其通断电流比Ｉ＿（ＯＮ）／Ｉ＿（ＯＦＦ）＞１０￣５。A self-aligned amorphous silicon thin-film transistor(α-Si TFT)was manufactured using self-alignment technology; The effect of the thickness of the active layer on the characteris-tics of the α-Si TFT is analyzed in theory. A novel α-Si TFT with a double-active-layer structure is proposed, which effectively increases the on-state current,I_(on),of the self-aligned α-Si TFT. With this new device,an on/off current ratio,I_(on)/I_(off),larger than 10￣5 has been achieved.

关 键 词：非晶硅 薄膜晶体管 液晶显示器 

分 类 号：TN321.503[电子电信—物理电子学] TN873.93