多孔硅及其在SOI技术中的应用研究  

Porous Silicon and Its Application in SOI Technology

作　　者：黄宜平[1] 李爱珍[1] 汤庭熬 鲍敏杭[1] 

机构地区：[1]复旦大学电子工程系

出　　处：《微电子学与计算机》1995年第2期18-19,共2页Microelectronics & Computer

摘　　要：对多孔硅的形成规律、微观结构作了系统的研究。采用ｎ－／ｎ＋／ｎ－掺杂结构工艺途径实现了硅岛宽度大于１００μｍ、硅膜单晶性好、硅膜厚度为２００ｎｍ到几μｍ范围的多孔氧化硅ＳＯＩ材料。用该材料研制的新型ＳＯＩ／半导体压力传感器具有灵敏度高、工作温度范围宽等特点。The formation and microstructure of porous silicon bas been investigated systematically. SOI material with more than 100 μm width and 200nm to several microns thickness of Si island has been achieved by using porous oxidized silicon in n-/n+/n- doped structure. A new type of pressure transducer formed by this SOI material has been developed. The SOI structure pressure transducer shows high sensitivity and wider operating temperature.

关 键 词：多孔硅 SOI 压力传感器 

分 类 号：TN304.12[电子电信—物理电子学] TH812[机械工程—仪器科学与技术]