用FTMS方法制备Co／Cu巨磁阻超晶格多层薄膜  

Preparation of Co/Cu Superlattices with Giant Magnetoresistance by Facing-Target Magnetron Sputtering Method

作　　者：曾宪庭[1] 赵伟杰[1] 费杨 黄康权[1] 

机构地区：[1]香港中文大学物理系

出　　处：《无机材料学报》1995年第4期498-502,共5页Journal of Inorganic Materials

摘　　要：本文用双靶相对磁控溅射法（ＦＴＭＳ）在云母单晶基板上原位生长了巨磁阻Ｃｏ／Ｃｕ超晶格薄膜，研究了放电气压及背景真空对薄膜结构和电磁性质的影响．结果表明，在优化溅射沉积条件下生长的超晶格薄膜，具有很好的［１１１］择优取向外延结构和光滑的Ｃｏ／Ｃｕ界面．高背景真空条件下生长薄膜能明显减少薄膜及界面缺陷和得到较高的巨磁阻效应，随着Ｃｕ层厚度的增加，两个磁阻振荡峰及２８％的饱和室温磁阻被观察到，其振荡周期为０．９ｎｍ．磁化强度测量表明，随着Ｃｕ厚度的变化，薄膜中交替出现铁磁和反铁磁相邻层间偶合．Co/Cu artificial superlattices with giant magnetoresistance (GMR) were grown on mica single crystal by a facing-target magnetron sputtering system. The influence of the discharge pressure and the base vacuum to the structural, electric and magnetic properties of the films was studied. The results showed that the films fabricated under optimized deposition conditions have a strong (111) preferred orientation perpendicular to the film surface and sharp interface between neighboring layers. Higher base vacuum is very favorable to obtain the Co/Cu superlattice with good texture and larger GMR effect. Two oscillation peaks of magnetoresistance with the thickness of Cu spacer were observed. The oscillating period was about 0.9um and a 28% magnetoresistance was obtained at room temperature. The measurements of magnetization clearly showed the oscillation between ferromagnetic coupling and antiferromagnetic coupling with the increasing of the spacer thickness.

关 键 词：巨磁阻 超晶格 多层薄膜 钴 铜 FTMS法 

分 类 号：O484.8[理学—固体物理]