δ掺杂的赝形高电子迁移率晶体管AIGaAs/InGaAs/GaAs结构中的费密边奇异性研究  

PHOTOLUMINESCENCE INVESTIGATION OF FERMI-EDGE SINGULARITY IN δ-DOPED HEMT_3 Al_(0.30)Ga_(0.70)A_3/In_(0.15)Ga_(0.85)As/GaAs

作　　者：沈文忠[1] 唐文国[1] 沈学础[1] A.DIMOULAS 

机构地区：[1]中国科学院红外物理国家重点实验室,上海200083 [2]Foundation

出　　处：《物理学报》1995年第5期825-831,共7页Acta Physica Sinica

摘　　要：报道了δ掺杂赝形高电子迁移率晶体管结构Al_(0.30)Ga_(0.70)As/In_(0.15)Ga_(0.85)As/GaAs的光致发光光谱研究的实验结果,除了观察到n=1电子子带到n=1重空穴子带,n=2电子子带到n=1重空穴子带间的强发光峰,还观察到了n=1电子子带到n=1轻空穴子带的弱发光峰,通过变化掺杂浓度来改变费密能级的位置,在这种δ掺杂的HEMTs系统中观察到了费密边奇异性,并把它归结为费密海与费密边附近未占据的第二电子子带之间的近共振散射作用所致。The photoluminescence spectra of the δ-doped pseudomorphic HEMTs Al0.30Ga0.70 As/In0.15Ga0.85As/GsAa with different doping concentration are reported. In addition to two strong PL peaks related to the recombination between electrons in the first (n=1), second (n=2) subbands and heavy holes in the first (n=1) subband, a weak PL peak related to the recombination between n=1 electrons and n = 1 light holes is obsevered and assigned. A variation of the doping concentration allows us to tune the Fermi level. We have observed the Fermi-edge singularity in the PL spectra and concluded that the strong Fermi-edge enhancement is due to the nearly resonant scattering between the Fermi sea and adjacent unoccupied n=2 electron subband.

关 键 词：ALGAAS 砷化镓 晶体管 费密边奇异性 

分 类 号：TN304.26[电子电信—物理电子学]