汞压对液相外延(Hg,Cd)Te的液相线及组份的影响  

INFLUENCE OF MERCURY PRESSURE ON LIQUIDUS TEMPERATURE AND MOLE FRACTION OF (Hg,Cd)Te LIQUID PHASE EPITAXY

作　　者：李标[1] 褚君浩[1] 陈新强[1] 刘坤[1] 曹菊英[1] 汤定元[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《物理学报》1995年第6期853-861,共9页Acta Physica Sinica

摘　　要：Hg_(1-x)Cd_xTe液相外延薄膜的质量与生长过程中的汞压有关。根据缔合溶液模型及相图理论,计算了汞压不平衡时液相点温度移动及组份的变化,并就液相外延的生长条件进行了分析。During the period of liquid phase epitaxy (LPE) growth of Hg1-xCdxTe layers from Te-rich solutions, a way of maintaining equilibrium Hg pressure over the solu-tion hase to be set up, otherwise an excessive and uncontrolled equilibrium tempera-ture change may occur that is detrimental to the quality of epilayers and run-to-run teproducibility. In this paper, a quantitatively calculation of the variations in the melting point and the mole fraction of the growth solution caused by the non-equi-librium Hg pressure is presented based on the associated solution model and phase diagram theory. Experimental data are also given for comparison. This result can be used directly to guide the liquid phase epitaxy of HgCdTe.

关 键 词：碲化镉 汞压 液相外延生长 薄膜 

分 类 号：TN304.22[电子电信—物理电子学]