射频溅射CoMnNi氧化物薄膜结构研究  

Study on Structure of Co-Mn-Ni Oxide Film Deposited by RF Sputtering

作　　者：谭辉[1] 陶明德[1] 韩英[1] 张寒 

机构地区：[1]中国科学院新疆物理研究所

出　　处：《Journal of Semiconductors》1989年第7期497-502,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：按一定原子比的CoMnNi氧化物混合体,经压片、高温烧结,制成具有尖晶石结构的靶.采用射频溅射,分别在单晶硅、玻璃和氧化铝陶瓷衬底上淀积生长的CoMnNi多成份氧化物薄膜,是一种理想的宽温区热敏材料.扫描电镜能谱和俄歇谱分析表明薄膜中Co,Mn,Ni的原子比偏离靶材料的设计值;X射线衍射谱证明这种薄膜具有非晶结构或尖晶石结构.文章给出了退火后X射线衍射谱及傅利叶交换红外光谱和激光喇曼谱,讨论了生成非晶薄膜和尖晶石结构的条件.Co-Mn-Ni oxide thin film deposited by RF sputtering on the substrates of single-crystal ai-licon, glass and Al_2O_3 is a good temperature sensitive material.It is indicated by the analysesof SEM, X-ray diffraction and Auger spectrumthat the atom ratio of the deposited films hassome deviation from the target material and the film structure is amophous or spinel.Basedon the results of X-ray diffraction,Raman spectrum and the Fourier-transforming infraredspectrum of the annealed samples, the condition of formation of amophous film and spinel filmis discussed.

关 键 词：射频溅射 氧化物 薄膜 结构 

分 类 号：TN304.210[电子电信—物理电子学]