硅中氢分子和空位型缺陷间的相互作用  

Interaction between Hydrogen Molecule and Vacancy-Type Defects in c-Si

作　　者：施天生[1] 白国仁[1] 

机构地区：[1]中国科学院上海冶金研究所

出　　处：《Journal of Semiconductors》1989年第7期561-563,共3页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：利用MNDO方法和模型硅晶体计算了硅中氢分子和空位型缺陷问的相互作用能.得到了晶体硅中氢分子和空位型缺陷倾向于相互结合,含氢空位型缺陷可成为硅中氢和空位聚集的核心的结论.The energy of interaction between hydrogen molecule and vacancy-type defects in crystal-line silicon is calculated using MNDO method and a series of model silicon crystals.It is con-cluded that the hydrogen molecule and the vacancy-type defects in silicon tend to trap eachother and that the hydrogenated vacancy-type defects serve as the nuclei of precipitation for bothhydrogen and vacancy in silicon.

关 键 词：硅 氢 缺陷 

分 类 号：TN304.120[电子电信—物理电子学]