离子束增强沉积制备TiB_2薄膜及其性能研究  

PREPARATION WITH ION BEAM ENHANCEMENT DEPOSITION AND CHARACTERISTIC STUDY OF TiB_2 THIN FILMS

作　　者：况园珠[1] 尤大伟[1] 白新德[2] 尤引娟[2] 

机构地区：[1]中科院空间科学与应用研究中心,北京100080 [2]清华大学材料科学与工程系,北京100084

出　　处：《真空科学与技术》1995年第3期185-189,共5页Vacuum Science and Technology

基　　金：国家自然科学基金

摘　　要：用离子束增强沉积法（IBED）在硅及铜基体上沉积了TiB2薄膜，研究了轰击离子束能量和束流对薄膜的微结构及力学性能的影响。用俄歇电子谱（AES）分析了膜的成分及其界面状况，用X射线衍射（XRD）研究了膜的微结构，并测定了膜的硬度及进行了膜的高温氧化试验。结果指出：（1）离子束轰击使薄膜晶化，从而影响到膜的硬度及抗高温氧化性能；（2）离子束增强沉积的二硼化钛薄膜是一种耐高温氧化的高硬膜。This paper introduces the ion beam enhancement deposition(IBED) of TiB2 thin films on Si and Cu, and the results of film properties and microstructure research. Effects of the energy and beam current of the bombardment ion beam on the microstructure and mechanic properties of films have been investigated. The composition and interface of the films were analyzed by AES. Microstructures of the films were analyzed by XRD. The microhardness of the flims was determined and the properties of high temperature oxidation were tested. The results show that ion beam bombardment during deposition can promote the crystallization of thin films and then has an effect on the microhardness and oxidation resistance. The TiB2 film deposited by IBED is a high-hardness film with good oxidation resistence against high temperature.

关 键 词：离子束增强沉积 二硼化钛薄膜 晶化 

分 类 号：TN304.055[电子电信—物理电子学]