用离子束混合及快速热处理方法形成钽的硅化物  

Tantalum Silicide Formation by Ion-Beam Mixing and Rapid Thermal Annealing

作　　者：姚文卿[1] Heiner Rvssel 

机构地区：[1]中国科学院半导体研究所 [2]Fraunhofer-Arbeitsgruppe Abteilung fur Bauelementetechnologie and Universitat Erlangen-Nurnberg,West Germany

出　　处：《Journal of Semiconductors》1989年第9期667-671,共5页半导体学报（英文版）

摘　　要：本文描述用离子束透过钽金属膜进行混合和快速热处理方法来形成钽的硅化物.用溅射方法在P型硅衬底上淀积一层金属钽,然后用砷离子束透过钽金属模进行混合,采用快速热处理后形成了平整的硅化钽薄层.使用厚度为500埃的钽金属膜,得到钽的硅化物薄层电阻为5.5Ω/□.研究了砷离子能量、剂量及钽膜厚度对钽的硅化物薄层电阻的影响.用透射电镜和台阶仪对所形成的硅化钽进行了分析和厚度测量.This paper describes the fabrication of tantalum silicide layers by ion-beam mixing andrapid thermal annealing.Smooth layers of tantalum silicide have been formed on p-type si-licon substrates by deposition of a tantalum film.Arsenic ion implantation through the filmproduces ion-beam mixing and rapid thermal annealing.By the use of 500 A Ta film, thesheet resistance of nearly 5.5 Q/□ has been obtained. The samples were characterized bytransmission electron microscopy. The thickness of tantalum silicide was also measured.

关 键 词：硅化钽 离子束混合 热处理 

分 类 号：TN304.05[电子电信—物理电子学]