两性杂质锗在LPE GaAs中分凝系数和占位比的计算  

Calculation of the Segregation Coefficient and the occupation Ratio GaGe/GeAs of the Amphoteric Impurity Ge in LPE-GaAs

作　　者：杨辉[1] 梁骏吾[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1989年第10期725-732,共8页半导体学报（英文版）

摘　　要：将三元相图理论推广到Ⅲ-Ⅴ族化合物及两性Ⅳ族元素杂质组成的赝四元体系,推导了Ⅳ族元素Ge在GaAs液相外延时的分凝系数的温度关系以及占位比与温度的关系,理论计算与实验相符合.并用拟合的方法确定了Ga-Ge-As固相体系中的相互作用参数是温度的二次函数.A theoretical temperature dependence of Ge segregation coefficient by is proposed extend-ing ternary alloy theory to pseudo-quaternary alloy system consisting of III-V compound andthe amphoteric impurity of group IV element.The temperature dependence of the occupationratio of Ge on Ga site to Ge on As site is also obtained.The calculated results are in agre-ement with the experimental data.Using iterative method,the quadric temperature dependenceof the interaction parameters in the Ga-Ge-As solid phase system is determined.

关 键 词：液相外延 分凝系数 相图 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学]