SnO_2薄膜的红外光谱和表面光电压谱的研究  

Study on IR SPV Spectram of the SnO_2 Films

作　　者：戴国瑞[1] 姜月顺[1] 王雅静[1] 董玺娟 汤大新[1] 李铁津 

机构地区：[1]吉林大学

出　　处：《Journal of Semiconductors》1989年第11期871-877,共7页半导体学报（英文版）

摘　　要：本文采用PECVD方法制备了SnO_2薄膜,对薄膜进行了红外光谱和表面光电压谱测量发现,薄膜表面化学吸附O_2^(2-)和O^-离子基团,成为反应活性中心、电子转移的桥梁,推测了SnO_2表面与乙醇气体敏感反应历程.SnO_(?)薄膜淀积在n-Si上,使其表面光电压信号增强二个数量级以上,我们认为是SnO_2/n-Si异质结作用和消反射作用的结果.This paper reports the preparation of the tin dioxide films deposited at 170℃ by meansof the plasma enhanced chemical vapor deposition (PECVD) and measure ments of infraredspectrum and surface photovoltaic spectrum.The experimental results show that two species ofO_2^(2-) and O^- are chemisorpted on the surface of the SnO_2 films as sensing activators of the re-action and medium of the charge transfer.The sensing mechanism of the SnO_2 films to thealcohol (C_2H_5-OH) is given.For a SnO_2 film deposited on an n-Si wafer, the surface photo-voltaic relative intensity increases over two orders of magnitude. We attribute the effect tothe action of the heterojunction and antireflection.

关 键 词：SNO2 薄膜 红外光谱 表面光电压谱 

分 类 号：TN304.055[电子电信—物理电子学]