GaAs被动调Q固体激光特性研究  

Passive Q-switching of diode-pumped Nd:GdVO_4 laser with GaAs

作　　者：杨济民[1] 刘杰[1] 何京良[1] 

机构地区：[1]山东师范大学物理与电子科学学院,山东济南250014

出　　处：《量子电子学报》2005年第4期542-544,共3页Chinese Journal of Quantum Electronics

基　　金：山东省自然科学基金重点资助项目(Z 2003A01)

摘　　要：使用紧凑的直线平-凹腔结构,利用半导体饱和吸收片GaAs实现了二极管(LD)端面抽运Nd:GdVO4高重复频率的被动调Q 1.06μm激光运转,在8 W的泵浦功率下获得平均输出功率达0.98 W的稳定激光输出,最小脉冲宽度为60 ns。最高重复频率达240 kHz。We report the operation of a passively Q-switched diode-pumped Nd：GdVO4 laser, using GaAs as saturable absorber in a very simple compact plane-concave cavity. With 8 W incident pump power, passively Q-switched laser was obtained with an average power of 0.98 W. The shortest pulse width of 60 ns and the highest repetition rate of 240 kHz are realized.

关 键 词：激光技术 LD抽运 GAAS 被动调Q ND:GDVO4 

分 类 号：TN248.1[电子电信—物理电子学]