Accelerated oxygen precipitation in fast neutron irradiated Czochralski silicon  

作　　者：马巧云 李养贤 陈贵锋 杨帅 刘丽丽 牛萍娟 陈东风 李洪涛 

机构地区：[1]School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China [2]School of Information and Communication Engineering, Tianjin Polytechnic University, Tianjin 300160, China [3]China Institute of Atomic Energy, Beijing 102413, China

出　　处：《Chinese Physics B》2005年第9期1882-1885,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China （Grant Nos 50032010 and 50472034） and the Natural Science Foundation of Hebei Province, China （Grant Nos 601047 and E2005000048）.

摘　　要：Annealing effect of the oxygen precipitation and the induced defects have been investigated on the fast neutron irradiated Czochralski silicon （CZ-Si） by infrared absorption spectrum and the optical microscopy. It is found that the fast neutron irradiation greatly accelerates the oxygen precipitation that leads to a sharp decrease of the interstitial oxygen with the annealing time. At room temperature （RT）, the 1107cm^-1 infrared absorption band of interstitial oxygen becomes weak and broadens to low energy side. At low temperature, the infrared absorption peaks appear at 1078cm^-1, 1096cm^-1, and 1182cm^-1, related to different shapes of the oxygen precipitates. The bulk microdefects, including stacking faults, dislocations and dislocation loops, were observed by the optical microscopy. New or large stacking faults grow up when the silicon self-interstitial atoms are created and aggregate with oxygen precipitation.Annealing effect of the oxygen precipitation and the induced defects have been investigated on the fast neutron irradiated Czochralski silicon （CZ-Si） by infrared absorption spectrum and the optical microscopy. It is found that the fast neutron irradiation greatly accelerates the oxygen precipitation that leads to a sharp decrease of the interstitial oxygen with the annealing time. At room temperature （RT）, the 1107cm^-1 infrared absorption band of interstitial oxygen becomes weak and broadens to low energy side. At low temperature, the infrared absorption peaks appear at 1078cm^-1, 1096cm^-1, and 1182cm^-1, related to different shapes of the oxygen precipitates. The bulk microdefects, including stacking faults, dislocations and dislocation loops, were observed by the optical microscopy. New or large stacking faults grow up when the silicon self-interstitial atoms are created and aggregate with oxygen precipitation.

关 键 词：oxygen precipitation neutron irradiation DEFECTS CZ-SI 

分 类 号：O571.5[理学—粒子物理与原子核物理]