GaAs分子束外延中硅阶梯掺杂优化及C-V测量  

Improved Si Stage Doping in MBE Grown CaAs and Electrochemical C-V Measurement

作　　者：孙永伟[1] 张秀兰[1] 杨国华[1] 叶晓军[1] 陈良惠[1] 

机构地区：[1]中国科学院半导体研究所纳米光电子实验室,北京100083

出　　处：《激光与红外》2005年第8期593-595,共3页Laser & Infrared

摘　　要：以硅作为砷化镓分子束外延(MBE)生长中的n型掺杂剂,为了确定硅的掺杂浓度,在一片GaAs半绝缘衬底上生长多个GaAs处延层,每一层中进行不同浓度的Si掺杂,然后用电化学C-V的方法确定各层中的载流子浓度,一次性得到了不同Si掺杂浓度与Si炉的温度之间的关系曲线。本文还介绍了如何采用控制生长的条件得到陡峭的界面,使不同掺杂浓度的层与层之间的界面变化非常明显。Si is often used as an n type dopant in MBE grown GaAs epi - layers. In order to determine the doping level, we have grown several GaAs layers on a semi insulated GaAs substrate. In each layer, the carrier concentration is different. We use electrochemistry to determine the carrier concentration in each layer, then we can get the relation between the Si doping level and the temperature of Si cell. How to get abrupt interface with improved growth conditions is also introduced.

关 键 词：分子束外延MBE 硅掺杂 砷化镓 电化学C—V 

分 类 号：TN304.23[电子电信—物理电子学] TN305.3