基于K参数思想的快速三维互连电感电阻提取算法  

Fast Inductance and Resistance Extraction of 3-D VLSI Interconnects Based on the Method of K Element

作　　者：魏洪川[1] 喻文健[1] 杨柳[1] 王泽毅[1] 

机构地区：[1]清华大学计算机科学与技术系,北京100084

出　　处：《电子学报》2005年第8期1365-1369,共5页Acta Electronica Sinica

基　　金：国家863高技术研究发展计划(No.2004AA1Z1050);国家自然科学基金(No.90407004)

摘　　要：在GHz以上高频集成电路中,电感寄生效应已严重影响了电路性能,必须研究有效的算法提取互连电感电阻.本文基于K参数(电感矩阵的逆)较好的局部化特性,提出适应高频情况的互连电感电阻提取算法.通过采用有效的窗口选择技术和导体细丝划分,以及在细丝电感计算复用和导纳矩阵求逆两方面的改进,本文算法可有效处理复杂的多层互连结构,在保持较好精度的情况下,计算速度比FastHenry快上百倍.In the integrated circuits with frequency above several GHz, parasitic inductive effect has greatly influenced the circuit performance,tberefore requiting efficient algorithm for extraction of frequency-dependent inductance and resistance. Based on good localization property of the K element （inverse of the partial inductance method） ,a fast algorithm for interconnect inductance and resistance extraction is proposed in this paper. With an efficient window selection technique,filament partitioning, and two improvements on calculating filament inductance and inverting the global admittance matrix, complex structures of multilayered interconnects can be handled very well.While preserving good accuracy,the presented method exhibits about 100x speed-up over the FastHenry for some actual examples.

关 键 词：三维互连 电感电阻提取 K参数 高频率 窗口技术 

分 类 号：TN47[电子电信—微电子学与固体电子学]