掺氮4H-SiC电子输运特性的多粒子蒙特卡罗研究  

An Ensemble Monte Carlo Study of Electron Transport in Nitrogen-Doped 4H-SiC

作　　者：王平[1] 杨燕[1] 杨银堂[1] 屈汉章[2] 崔占东[3] 付俊兴[1] 

机构地区：[1]西安电子科技大学微电子学院,陕西西安710071 [2]西安邮电学院信控系,陕西西安710061 [3]中国电子科技集团公司第13研究所,河北石家庄050051

出　　处：《电子学报》2005年第8期1512-1515,共4页Acta Electronica Sinica

基　　金：教育部重点资助项目(No.02074);国防科技预研基金(No.51408010601DZ1032)

摘　　要：在最新能带结构计算的基础之上,采用非抛物性能带模型对掺氮4H-SiC电子输运特性进行了多粒子蒙特卡罗(EnsembleMonteCarlo)研究.研究表明,低场下,掺杂浓度较低时,氮杂质不完全电离导致的中性杂质散射对4H-SiC横向电子迁移率影响较小.随着掺杂浓度的增加,中性杂质散射作用增强.掺杂浓度较高时,随着温度的增加,中性杂质散射的影响逐步减弱.4H-SiC电子迁移率较高且各向异性较小,温度为296K时得到的横向电子饱和漂移速度为2.18×107cm/s;阶跃电场强度为1000KV/cm时,横向瞬态速度峰值接近3.3×107cm/s,反应时间仅为百分之几皮秒量级.模拟结果同已有的测试结果较为一致.Based on a recent band structure calculation, the electron transport properties in Nitrogen-doped 4H-SiC were investigated by an ensemble Monte Carlo technique with a single nonparabohc band model. The results show that at lower doping concentration, neutral impurity scattering has little influence on the electron mobility perpendicular to the principal c axis. With increasing doping concentration, the impact of neutral impurity scattering becomes more significant. However the contribution of neutral impurity scattering to the total mobility is becoming smaller with increasing temperature at higher doping concentrafion.4H-SiC has a higher electron mobility with much less pmneuneed anisotropy. At 296K, the saturation velocity for transport perpendicular to the c axis given by the model is 2.18 × 10^7cm/s.The peak transient velocity at high step electric field such as 1000KV/cm is 3.3 × 10^7 cm/s when the electric field E is applied perpendicular to the c axis. The response time is only in deep subpicoseconds. The simulation results are in excellent agreement with physical measurements.

关 键 词：4H-SIC 蒙特卡罗研究 中性杂质散射 饱和漂移速度 

分 类 号：TN304.2[电子电信—物理电子学]