CTIA读出方式的微测辐射热计  

Microbolometer read out with CTIA method

作　　者：孟丽娅[1] 袁祥辉[1] 吕果林[1] 黄友恕[1] 

机构地区：[1]重庆大学光电技术及系统教育部重点实验室,重庆400044

出　　处：《光电工程》2005年第8期81-84,共4页Opto-Electronic Engineering

基　　金：国家自然科学基金资助项目(60377036)

摘　　要：在微测辐射热计热敏元的热平衡模型基础上,分析了CTIA读出方式的微测辐射热计在不同背景和衬底温度下的输出响应率,仿真了探测器面阵在偏移-增益两点校正法校正后的输出。为衡量不同衬底温度下校正后残余非均匀性噪声的大小,考虑到响应率随背景温度和衬底温度变化的因素,提出了非均匀性噪声等效功率(NNEP)指标。研究结果表明,在采用20μs积分时间和5pF积分电容时,探测元响应率可以达到106V/W到107V/W;衬底温度的变化在约0.01K以内时,采用两点校正法可以对该读出方式的微测辐射热计输出进行良好的校正。Based on a thermal-balance model of microbolometer, the responsibility of microbolometer read out with CTIA （Capacitive Transimpedance Amplifier） at different temperature of background and substrate is analyzed, and the output voltage of detector array after offset-gain two-point correction is simulated. Taking account of the response change with substrate temperature, a term of NNEP （Non-uniformity Noise Equivalent Power） is proposed to measure the residual non-uniformity noise after two-point correction. The test results show that the responsibility may be 10^6V/W to 10^7V/W when integration time is 20μs and integration capacitor is 5pE By means of two-point correction, the output of the microbolometer in CTIA read-mode can be accurately corrected when temperature change of substrate is within 0.01K.

关 键 词：微测辐射热计 CTIA 响应率 温度相关 

分 类 号：TN215[电子电信—物理电子学]