电子束外延生长Er_2O_3单晶薄膜  

Epitaxial Growth of Er_2O_3 Films by MBE

作　　者：朱燕艳[1] 徐润[1] 陈圣[1] 方泽波[1] 薛菲[1] 樊永良[1] 蒋最敏[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《江西科学》2005年第4期299-302,共4页Jiangxi Science

基　　金：国家重点基础研究专项基金(批准号:G2001CB3095;10321003和60425411)资助的课题。

摘　　要：使用电子束外延的方法在p型Si(001)和Si(111)衬底上,在700℃、7×10-6Torr的条件下首次实现了Er2O3单晶薄膜的生长。薄膜的结晶情况依赖于薄膜的生长温度和氧气压。在较低的温度和较低的氧气压下在薄膜内容易生成硅化铒,薄膜也趋于多晶化。而且,生长在SiO2/Si衬底上的Er2O3单晶薄膜的结晶情况和表面粗糙度比生长在清洁的Si衬底上的薄膜要好很多。The epitaxial growth of Er2O3 films has been achieved on Si（001 ） and Si （ 111 ） substrates by MBE at the growth temperature of 700℃ in an oxygen pressure of 7 × 10^-6 Torr. The crystalline structure and orientation of the as - deposited films are strongly dependent on the growth temperature and oxygen pressure. Silicide is formed in the films grown at the lower temperature and lower oxygen pressure. In addition, the oxide phase in the films grown at the lower temperature is polycrystalline. The surface roughness and crystallinity of the Er2O3 films grown on oxidized Si （111 ） and Si （001） surfaces are improved than those grown on the clean Si surfaces, indicating that the oxidized Si surfaces are preferable to epitaxially grow Er2O3 films than on the clean Si surfaces.

关 键 词：分子束外延 Er2O3 介质膜 

分 类 号：O484.1[理学—固体物理]