用于提高光刻分辨率的光学成像算法的研究  

The Algorithm of Optical Imaging in Lithography System for Enhancing Lithography Resolution

作　　者：王国雄[1] 王雪洁 

机构地区：[1]浙江大学超大规模集成电路设计研究所,杭州310027 [2]浙江大学城市学院信息与电子工程分院,杭州310027

出　　处：《半导体技术》2005年第9期24-27,共4页Semiconductor Technology

基　　金：国家自然基金资助项目(9 0 2 0 7 0 0 2 );国家高新技术研究发展计划资助项目(2 0 0 2 A A 1 Z 1 4 6 0 )

摘　　要：通过对光刻系统中光学成像系统的模拟,提出了改善光刻分辨率的途径以及基于卷积核的计算光强的方法,并介绍了光学系统的传输交叉系数具体计算过程。建立准确描述由于掩模制造工艺、光刻胶曝光、显影、蚀刻所引起的光学邻近效应和畸变所导致的关键尺寸变化的光刻工艺模型,有助于开发由成品率驱动的版图设计工具,自动地实现深亚微米下半导体制造中先进的掩模设计、验证和检查等任务。Through simulating the optical imaging system in lithography system, some ways to improve the lithography resolution and a convolution-based method to calculate light intensity are presented, and the calculating process of TCC （transmission cross coefficient） of optical system is introduced. Developing the lithography process models to properly characterize critical dimension （CD） variations caused by proximity effects and distortions introduced by patterning tool, reticule, resist exposure, development and etching, they are beneficial to develop a yield-driven layout design tool, the engineers could use it to automate the tasks of advanced mask design, verification and inspection in deep sub-micron semiconductor manufacturing.

关 键 词：光刻仿真 分辨率提高技术 光学成像 

分 类 号：TN305.7[电子电信—物理电子学]