蓝宝石基LED外延片背减薄与抛光工艺研究  

Study on the Back Lapping and Polishing of Sapphire-Based LED Epitaxial Wafers

作　　者：李冰[1] 郭霞[1] 刘莹[1] 李秉臣[1] 王东凤[1] 沈光地[1] 

机构地区：[1]北京市光电子技术实验室北京工业大学电控学院,北京100022

出　　处：《半导体技术》2005年第9期57-60,共4页Semiconductor Technology

基　　金：国家863计划项目(2004AA311030);北京市教育委员会资助项目(KZ200510005003);国家973计划(20000683-02);北京市教委项目(2002kj018);北工大博士启动基金(kz0204200387);北京市科委重点项目(D0404003040221)

摘　　要：研究了蓝宝石基LED外延片背减薄过程中去除速率和表面粗糙度与研磨转速和研磨压力的关系,比较了不同的磨料颗粒度对去除速率和表面粗糙度的影响,并研究了抛光过程中表面粗糙度随时间的变化规律,为背减薄与抛光工艺的优化提供了依据。The effects of plate rotation speed and jig pressure on the remove rate and surface roughness during the back lapping of sapphire-based LED epitaxial wafers are studied. The effects of abrasive granularity are compared, and the relationship between surface roughness and polishing time during the lapping process is also studied.All those works will be help to the improvement of backlapping and polishing technology.

关 键 词：蓝宝石 发光二极管 背减薄 研磨 抛光 

分 类 号：TN305.2[电子电信—物理电子学]