InGaAlP/InGaP多量子阱中的红外向可见光的上转换  

Upconversion of Infared to Visible Light in InGaAlP/InGaP Multi-quantum Well

作　　者：尉吉勇[1] 黄柏标[1] 于永芹[1] 张琦[1] 姚书山[1] 张晓阳[1] 秦晓燕[1] 

机构地区：[1]山东大学晶体材料研究所,晶体材料国家重点实验室济南250100

出　　处：《人工晶体学报》2005年第4期585-588,共4页Journal of Synthetic Crystals

摘　　要：利用808nm激光二极管泵浦的Nd:YAG晶体发出的1064nm皮秒激光器实现了InGaAlP多量子阱材料的红外1064nm向可见光波长660nm、625nm、580nm的上转换,并且通过条纹相机收集的时间分辨表征了此材料的上转换激发态的寿命。波长1064nm向625nm的上转换激发态寿命约为5ns,而1064nm向660nm的上转换激发态寿命约为7ns。通过双光子原理解释了此现象。The upconversion property converting from 1064nm wavelength to 660nm,625nm and 580nm of In GaAIP multiple quantum well material was realized using Nd：YAG 1064nm laser pumped by 808nm laser diode, and the upconversion PL spectrum and time resolution spectrum related to the material were characterized by the strip camera. The upconversion life of excited state was measared as well. The experimental results show that the upconversion life of excited state converting from 1064nm to 625nm is about 5ns, and that of the excited state from 1064nm to 660nm is about 7ns. The phenomena were explained through the nonlinear two photon absorption process.

关 键 词：INGAALP 量子阱 光学上转换 双光子吸收 

分 类 号：TN304[电子电信—物理电子学]