硅基片上微米厚度SiO_2膜的斜入射红外反射透过谱分析  

Analysis of Reflective IR Transmittance Spectra at Oblique Incidence of Micrometer SiO_2 Films on c-Si Substrate

作　　者：余云鹏[1] 林舜辉[1] 林璇英[1] 林揆训[1] 

机构地区：[1]汕头大学理学院,广东汕头515063

出　　处：《光谱学与光谱分析》2005年第8期1234-1236,共3页Spectroscopy and Spectral Analysis

基　　金：国家重点基础研究发展规划项目(G2000028200)资助

摘　　要：介绍了硅基片上具有微米厚度的SiO2膜在斜入射情况下的红外反射透过谱测量结果, 发现在900～1 250 cm-1波段内的结果有别于一般的透射谱, 出现了峰位基本不变的1 100 cm-1反射峰. 随厚度增大, 1 100 cm-1峰和1 200 cm-1凹谷的降低逐渐变为迟缓. 当厚度达到2 μm以上后, 1 075～1 250 cm-1谱线的变化已不再明显. 通过分析表明, 结果中包含了SiO2膜的表面反射谱和SiO2膜层的吸收谱. 当膜厚达到微米量级而引起较大吸收时, 表面反射谱的贡献相当明显. 此时, 对该段谱线的分析不能仅考虑膜层的吸收.The reflective infrared transmittance spectra at oblique incidence of SiO2 films deposited on c-Si wafer have been measured. The thickness of the films was micrometer quantity. The spectra showed many differences from the common transmittance （or absorption） spectra in the range of 900-1 250 cm^-1. The reflectivity peak at 1 100 cm^-1 was found and its position was essentially fixed, With the thickness increased, the drop of peak at 1 100 cm^-1 and hollow at 1 200 cm^-1 became gradually slow. As the thickness increased to be over 2 micrometers, the shape of the spectra in 1 075-1 250 cm^-1 did not change obviously. The analysis showed that the measured spectrum was composed of reflectivity spectrum and absorption spectrum of the SiO2 film, which occurred at Air/SiO2 interface and SiO2 layer respectively. When the thickness was over one micrometer and the film had considerable absorption, the contribution from reflectivity spectrum became very obvious. So the absorption is not the only factor in the analysis of these spectra.

关 键 词：红外光谱 二氧化硅 膜 

分 类 号：O657.3[理学—分析化学] O484.8[理学—化学]