AlGaN基PIN光电探测器的模型与模拟  

Model and Simulation of GaN Based PIN Photodetectors

作　　者：张春福[1] 郝跃[1] 张金凤[1] 龚欣[1] 

机构地区：[1]西安电子科技大学微电子所宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《Journal of Semiconductors》2005年第8期1610-1615,共6页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目(批准号:51327020301)~~

摘　　要：在漂移扩散方程的基础上建立了AlGaNp-i-n光电探测器的物理模型,分析了多种结构AlGaNp-i-n光电探测器的光谱响应,并讨论了AlGaN/GaN异质结界面极化效应对太阳盲区p-GaN/i-Al0.33Ga0.67N/n-GaN倒置异质结结构p-i-n光电探测器(invertedheterostructurephotodetectors,IHPs)UV/Solar选择比(280nm与320nm响应度之比)的影响.结果表明:优化p层是提高器件光谱响应的有效途径;为获得较高的UV/Solar选择比,光伏模式(零偏压)为太阳盲区p-GaN/i-Al0.33Ga0.67N/n-GaNIHPs的最佳工作模式;在光伏模式下考虑极化效应影响时,Ga面p-GaN/i-Al0.33Ga0.67N/n-GaNIHPs器件的UV/Solar选择比可达750,与Tarsa等人报道的三个量级的实验结果基本一致.The physical model of the AlGaN based p-i-n photodetector is built on the base of the coupled drift-diffusion equation. Spectral responsivity curves of various AlGaN p i n photodetectors and the influence of polarization at the interface of AlGaN/GaN heterostructure on the UV/solar rejection ratios of p-GaN/i-A10.33 Ga0.67 N/n-GaN inverted heterostructure photodetectors（IHPs） are analyzed. The results show that the p-type layer imposes an important influence on the spectra responsivity of the A1GaN based p-i-n photodetecotrs,and the optimization of the p type layer is an effective method of significantly unproving the spectra responsivity. In order to get high UV/solar rejection ratios, the solar-blind IHPs should work best on the unbiased condition. When the polarization is considered with zero blase, the UV/solar rejection ratios of Ga-faced solar-blind p-GaN/i-Al0.33 Ga0.67 N/n-GaN IHPs are 750, which meets the Tarsa＇s experiment result of about three orders of magnitude.

关 键 词：PIN光电探测器 光谱响应 太阳盲区 UV/solar选择比 极化效应 

分 类 号：TN364[电子电信—物理电子学]