空心阴极放电沉积氮化碳薄膜的结构和成键性质  

Structure and bonding properties of carbon nitride films prepared by DC hollow cathode type discharge method

作　　者：杨平[1] 冯贤平 施芸城[3] 闫永辉[3] 

机构地区：[1]东华大学材料科学与工程学院,上海200051 [2]波多黎各大学物理系,圣胡安009313343 [3]东华大学物理系,上海200051

出　　处：《物理实验》2005年第9期13-16,共4页Physics Experimentation

基　　金：上海市科学技术发展基金项目(No.0252nm110);教育部科学技术研究重点项目(No.03077);波多黎各大学启动基金

摘　　要：利用空心阴极放电等离子体源在Si(100)衬底上沉积了氮化碳薄膜.用XRD,SEM,XPS及拉曼和红外吸收光谱对薄膜的结构、成分和化学键等进行了研究.XRD分析表明,制备的氮化碳薄膜为非晶结构.XPS分析证实了薄膜中以C—C,sp2CN和sp3CN键为主,并得出薄膜中的氮碳比为0.71,而sp3—CN相的含量也达到了0.39.拉曼和红外吸收光谱的结果也与XPS分析的键态结果一致.Carbon nitride films are deposited on Si（100） single-crystalline wafers by using DC hol- low cathode type discharge （DC-HCD） method. The structure, composition and chemical bonding state of the obtained films are investigated using XRD, SEM, XPS, Raman spectra and FTIR. The XRD pattern shows that the films are amorphous structure. XPS indicates that the films are mainly consisted of C-C, sp^2CN and sp^3CN bonds. It also gives us the value of N/C ratio and the proportion of spS^3-CN phase around 0. 71 and 0. 39, respectively. The results relating with chemical bonding state obtained from Raman spectra and FTIR agree with the results of XPS.

关 键 词：氮化碳薄膜 直流空心阴极放电 XPS 拉曼光谱 红外吸收光谱 

分 类 号：O484.1[理学—固体物理]