ZnS:Zn,Pb薄膜的制备及其发光性能研究  

Preparation and Luminescence Properties of ZnS:Zn,Pb Thin Film

作　　者：张晓松[1] 李岚[1] 陶怡[1] 徐征[2] 邹开顺[1] 

机构地区：[1]天津理工学院材料物理研究所,天津300191 [2]北京交通大学光电子技术研究所,北京100044

出　　处：《光电子．激光》2005年第9期1040-1044,共5页Journal of Optoelectronics·Laser

基　　金：天津市自然科学基金资助项目(013615211);天津理工学院科技发展基金资助项目(Lg04032);天津市重点学科资助项目

摘　　要：用电子束蒸发的方法制备了ZnS:Zn,Pb荧光薄膜,分别经400℃、600℃退火处理。采用X射线衍射(XRD)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)、光致发光(PL)谱等,表征了ZnS:Zn,Pb荧光薄膜的结构、成分、形貌和发光性能。实验表明,随着退火温度的升高,薄膜的结构程度提高,弥补了薄膜晶体表面的表面缺陷,提高了薄膜的发光性能。因此,退火处理是提高ZnS:Zn,Pb荧光薄膜发光性能的有效方法之一。ZnS：Zn, Pb thin films were grown on ITO substrates by electron beam evaporation method with sintered ZnS： Zn, Pb targets,and they are annealed in 400℃ and 600℃ respectively. The construction, ingredient, surface morphology and luminescence properties of the ZnS：Zn, Pb thin films are represented by X-ray diffraction（XRD）, X-ray photoelectron spectroscope（XPS）, scanning electron microscope（SEM） and photoluminescence（PL） spectra, The blue/green luminescent peak is detected in ZnS：Zn, Pb thin films, It is found that crystallization is improved, and the disfigurement on crystal surface is repaired with the annealing temperature increase. The luminescent propoerties of ZnS, Zn, Pb thin films are enhanced in 400℃ and 600℃ annealing processes, So it can be concluded that postdeposition annealing is one of effective methods to increase luminescence properties of ZnS. Zn, Pb phosphor thin films.

关 键 词：ZnS:Zn Pb薄膜 电子束蒸发 场发射显示器(FED) 退火处理 

分 类 号：TN383.2[电子电信—物理电子学]