Excitonic Absorption of Semiconductor Nanorings under Terahertz Fields  被引量:1

Excitonic Absorption of Semiconductor Nanorings under Terahertz Fields

在线阅读下载全文

作  者:张同意 赵卫 朱少岚 

机构地区:[1]State Key Laboratory of Transient Optics and Photonics. Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710068

出  处:《Chinese Physics Letters》2005年第10期2643-2646,共4页中国物理快报(英文版)

基  金:Supported by the National Natural Science Foundation of China under Grant Nos 10390161 and 30370420.

摘  要:The optical absorption of GaAs nanorings (NRs) under adc electric field and a terahertz (THz) ac electric field applied in the plane containing the NRs is investigated theoretically. The NRs may enclose some magnetic flux in the presence of a magnetic field perpendicular to the NRs plane. Numerical calculation shows that the excitonic effects are essential to correctly describe the optical absorption in NRs. The applied lateral THz electric field, as well as the dc field leads to reduction, broadening and splitting of the exciton peak. In contrast to the presence of a dc field, significant optical absorption peak arises below the zero-field bandgap in the presence ofa THz electric field at a certain frequency. The optical absorption spectrum depends evidently on the frequency and amplitude of the applied THz field and on the magnetic flux threading the NRs. This promises potential applications of NRs for magneto-optical and THz electro-optical sensing.The optical absorption of GaAs nanorings (NRs) under adc electric field and a terahertz (THz) ac electric field applied in the plane containing the NRs is investigated theoretically. The NRs may enclose some magnetic flux in the presence of a magnetic field perpendicular to the NRs plane. Numerical calculation shows that the excitonic effects are essential to correctly describe the optical absorption in NRs. The applied lateral THz electric field, as well as the dc field leads to reduction, broadening and splitting of the exciton peak. In contrast to the presence of a dc field, significant optical absorption peak arises below the zero-field bandgap in the presence ofa THz electric field at a certain frequency. The optical absorption spectrum depends evidently on the frequency and amplitude of the applied THz field and on the magnetic flux threading the NRs. This promises potential applications of NRs for magneto-optical and THz electro-optical sensing.

关 键 词:SIDE-BAND GENERATION GAAS QUANTUM-WELLS OPTICAL-ABSORPTION ELECTRIC-FIELD SPECTRA RINGS ILLUMINATION IONIZATION RADIATION 

分 类 号:O472.5[理学—半导体物理]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象