Ge_xSi_(1-x)/Si应变超晶格雪崩光电探测器的分析与优化设计  

Analysis and Optimum Design on Ge_xSi(1-x)/Si Strained-Layer Superlattices Avalanche Photodetector

作　　者：李国正[1] 张浩[1] 

机构地区：[1]西安交通大学电子工程系,西安710049

出　　处：《光学学报》1996年第6期839-843,共5页Acta Optica Sinica

摘　　要：对GexSi(1-x)／Si应变超晶格雪崩光电探测器进行了分析与优化设计。优化结构为：i-Si雪崩区厚是1．8～2μm；p-Si区的掺杂浓度是1018cm－3，厚为17nm；超晶格总厚为340um。它可探测1．3～1．6μm的红外光。The GexSi(1-x)/Si strained-layer superlattices avalanche photodetector has been studied and optimum designed. Its optimum structure parameters are: the thickness of i-Si avalanehe region is 1. 8~2 μm; the carrier concentration of p-Si region is 1018 cm-3 and thickness is 17 nm; the total thickness of superlattices is 340 nm. The detector can be operated in the range of 1. 3~ 1. 6 μm.

关 键 词：应变超晶格 雪崩 光电探测器 锗硅/硅 

分 类 号：TN15[电子电信—物理电子学]