CMOS图像传感器用像素级双采样存储技术  

Dual Sampling and Storing in Pixel Level for CMOS Image Sensor Applications

作　　者：裴志军[1] 国澄明[1] 姚素英[1] 赵毅强[1] 

机构地区：[1]天津大学ASIC设计中心,天津300072

出　　处：《固体电子学研究与进展》2005年第3期335-339,共5页Research & Progress of SSE

摘　　要：多次曝光技术是扩展CM O S APS图像传感器动态范围较为有效的方法,但多于两次的曝光,信号处理复杂,使传感器的帧频受到限制,而像素级双采样存储技术将两次曝光采样及图像组合处理在像素内实现,在获得高动态范围的同时,可有效提高图像实时处理的速度,并且可以工作于高速同步曝光模式。Multiple exposure technique is one of the feasible approache to extend the dynamic range of CMOS image sensor, but the complication of signal processing with more than two exposures usually degrades the frame rate. High dynamic range as well as high frame rate of global shutter can be acquired with the technique of dual sampling and storing in pixel level proposed in the paper for both double exposure and image combination implemented in pixels.

关 键 词：互补金属氧化物半导体 图像传感器 动态范围 双采样存储 

分 类 号：TN4[电子电信—微电子学与固体电子学]