粒状氮化镓微晶的合成及其结构性能的研究  

Study on Synthesis of Grainy GaN Powders and Their Structural Properties

作　　者：肖洪地[1] 马洪磊[1] 薛成山[2] 胡文容[1] 马瑾[1] 宗福建[1] 张锡健[1] 

机构地区：[1]山东大学,山东济南250100 [2]山东师范大学半导体研究所,山东济南250014

出　　处：《稀有金属材料与工程》2005年第9期1411-1414,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金资助项目(60071006;90201025);高等学校博士学科点专项科研基金(20020422045;20020422056)

摘　　要：在950℃的氮化温度下,通过单氢氧化镓(GaO2H)粉末与流动的NH3反应35min制备出粒状GaN微晶。通过X射线衍射(XRD)和扫描电镜(SEM)研究发现,GaN粉末是六角纤锌矿结构的粒状微晶,其晶格常数a和c分别为0.3191nm和0.5192nm。X射线光电子能谱(XPS)揭示试样中有Ga-N键形成,Ga与N两元素比为1∶1。Grainy gallium nitride（GaN） powders have been synthesized by nitriding GaO2H powders in the flow of NH3 gas at a nitridation temperature of 950℃ for 35 min. Measurement results by XRD and SEM indicate that the synthesized GaN is of a single-phase hexagonl wurtzite structure with lattice constants of a=0.3191 nm and c=0.5192 nm, and the surface outline of GaN powder is grainy. XPS confirms the formation of bonding between Ga and N, and the surface stoichiometry of Ga：N is 1：1.

关 键 词：GaO2H粉末 粒状GaN微晶 氮化温度 

分 类 号：TN304[电子电信—物理电子学]