Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm  

1.74μm压应变InGaAs/InGaAsP量子阱分布反馈激光器(英文)

作　　者：潘教青[1] 王圩[1] 朱洪亮[1] 赵谦[1] 王宝军[1] 周帆[1] 王鲁峰[1] 

机构地区：[1]中国科学院半导体研究所光电子研究发展中心,北京100083

出　　处：《Journal of Semiconductors》2005年第9期1688-1691,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:60176023)

摘　　要：The compressively strained InGaAs/InGaAsP quantum well distributed feedback laser with ridge-wave- guide is fabricated at 1.74μm. It is grown by low-pressure metal organic chemical vapor deposition（MOCVD）. A strain buffer layer is used to avoid indium segregation. The threshold current of the device uncoated with length of 300μm is 11.5mA. The maximum output power is 14mW at 100mA. A side mode suppression ratio of 35.5dB is obtained.制备了1.74μm脊波导结构压应变InGaAs/InGaAsP量子阱分布反馈激光器.采用低压金属有机化合物气相沉积法生长器件材料,应用应变缓冲层防止In的分凝.未镀膜的腔长为300μm的器件阈值电流为11.5mA,100mA时最大输出功率为14mW,边模抑制比为33.5dB.

关 键 词：DFB laser compressive strain quantum well 

分 类 号：TN248[电子电信—物理电子学]