一种新型结构的InGaP/GaAs负阻异质结晶体管  

An InGaP/GaAs Negative Differential Resistance Heterojunction Bipolar Transistor with a New Structure

作　　者：郭维廉[1] 齐海涛[1] 张世林[1] 钟鸣[1] 梁惠来[1] 毛陆虹[1] 宋瑞良[1] 周均铭[2] 王文新 C.Jagadish 傅岚[3] 

机构地区：[1]天津大学电子信息工程学院,天津300072 [2]中国科学院物理研究所,北京100080 [3]澳大利亚国立大学

出　　处：《Journal of Semiconductors》2005年第9期1783-1788,共6页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目(批准号:2002CB311905)~~

摘　　要：利用硅双基区晶体管(DUBAT)产生负阻的原理,针对HBT器件结构和MBE材料结构的特点,设计并研制出一种基区刻断结构的负阻型HBT(NDRHBT).经过特性和参数测试,证明此种NDRHBT具有显著的微分负阻效应,并发现负电流区负阻效应和光照可改变其IV特性,器件模拟结果和测试结果基本一致.By using the NDR operation principle of silicon dual base transistor （DUBAT）,referring to the features on structure of HBT and MBE material,this paper proposes the design and fabrication of a novel NDRHBT with a cut-off base structure. The parameters and characteristics measured from the fabricated devices demonstrate that the NDRHBT has good NDR characteristics and good device performance. In addition,the NDR effect that occurs in the negative current region and a light radiation have an effect on I-V characteristics. The results of device simulation for COBNDRHBT are in agreement with the measured results.

关 键 词：异质结双极晶体管 双基区晶体管 三端负阻器件 逻辑功能器件 

分 类 号：TN32[电子电信—物理电子学]