B_(0.44)C_(0.27)N_(0.29)化合物的合成、表征和性能  

Synthesis, characterization and properties of B_(0.44)C_(0.27)N_(0.29) compounds

作　　者：白锁柱[1] 姚斌[1] 苏文辉[1] 

机构地区：[1]吉林大学物理学院

出　　处：《物理学报》2005年第10期4627-4632,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:50472003);教育部博士点基金(批准号:20040183063)资助的课题.~~

摘　　要：以硼酸和三聚氰胺为原料,利用化学法、真空热处理及高温高压技术对BCN化合物的形成、结构及相变进行了研究.在真空10-3Pa条件下,经1273K高温热处理得到非晶B_C_N前驱物.这种前驱物在920K以下为绝缘体,在920K由绝缘体转变为非晶半导体.在973—1003K和1013—1073K范围这种非晶半导体表现出不同的电导_温度关系,电导激活能分别为0·34eV和1·10eV,表明在两个不同的温度区域这种非晶半导体的导电机构不同.将这种前驱物在3·5GPa,经1473K退火40min后由非晶态转化为单相六方结构的B_C_N晶体,其成分为B0·44C0·27N0·29,晶格常数为a=0·2515nm,c=0·6684nm.六方B0·44C0·27N0·29晶体在1330,1364,1588和1617cm-1出现四个强的Raman散射峰,其中1330和1617cm-1被认为是六方B0·44C0·27N0·29晶体特征Raman散射峰.B-C-N compounds with different structures were synthesized by chemical reaction between Boracic acid and melamine, combined with heat treatment under vacuum and high pressure. An amorphous B-C-N precursor was prepared at 1273K under 10^-3Pa. This amorphous B-C-N behaves as an insulator below 920K, and transforms into semiconductor above 920K. The B-C- N semiconductor shows different conductivity-temperature relationship in the temperature ranges of 973--1003K and 1013-1073K, and has conductivity activation energy of 0.34eV in the former range and 1. lOeV in the latter range, indicating that conductivity mechanism of the B-C-N amorphous semiconductor is different in the two temperature ranges. Annealed for 40min. at 1473K under 3.5GPa, the amorphous B-C-N precursor crystallizes into hexagonal B0.44C0.27 N0.29 （h-BCN） compound with lattice constants of a = 0.2515nm and c = 0.6684nm. Four strong Raman scattering peaks were observed at 1330, 1364, 1588 and 1617cm^-1 in the h-BCN, of which the peaks located at 1330 and 1617cm^-1 are considered as characteristic Raman peaks of the h-BCN.

关 键 词：B-C-N 高温高压 拉曼和红外光谱 化合物 RAMAN散射 非晶半导体 真空热处理 电导激活能 六方结构 合成 

分 类 号：O611[理学—无机化学]