Ⅲ-Ⅴ族半导体晶片键合热应力分析  

Thermal Stress in Ⅲ-Ⅴ Group Semiconductor Wafer Bonding

作　　者：陈斌[1] 王兴妍[1] 黄辉[1] 黄永清[1] 任晓敏[1] 

机构地区：[1]北京邮电大学光通信中心,北京100876

出　　处：《半导体光电》2005年第5期421-424,427,共5页Semiconductor Optoelectronics

基　　金：国家"973"计划资助项目(2003CB314902);国家自然科学基金重点项目(90201035);国家自然科学基金重大研究计划项目(90104003)

摘　　要：利用结构力学模型并且结合有限元方法,分析了InP/GaAs晶片键合时界面热应力的分布情况,理论分析结果和有限元结果一致,实验也证实了分析结果。最后详细讨论了减小晶片键合热应力的有关因素,对在热处理时提高晶片的键合质量提供一定的理论参考。The interfacial thermal stresses arising in InP/GaAs wafer bonding are evaluated by the structure mechanics approach, as well as by the finite element method. The both reach a good agreement, which are confirmed by the experiments. Finally, the related factors that can help to lessen thermal stresses are discussed in detail. It is a valuable reference to enhance wafer bonding quality.

关 键 词：热应力 剥离应力 应变能 晶片键合 

分 类 号：TN305[电子电信—物理电子学]